Research
Accelerators
Two primary accelerators and one secondary accelerator are used to study ion beam-solid interactions. One primary accelerator has a maximum voltage of 200 kV and uses an RF ion source for gaseous elements, and the other primary accelerator is a 160 kV system equipped with a universal ion source that provides ion beams of most elements.
The ultra-high-vacuum target chamber of this accelerator is also equipped with an additional low-voltage (100 eV–10 keV) secondary accelerator for low-energy implantations and film deposition.
Primary work includes measuring
- Ion stopping powers
- Transmitted energy and angular distributions of ions channeled through thin films
- Lattice damage and self-annealing phenomena
- Low-energy implantations and film deposition
Measurements are based on Rutherford backscattering and channeling analysis of the near-surface region of target materials.